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报告导航:研究报告—
TMT产业—电子半导体
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2011-2012年全球及中国功率器件行业研究报告 |
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字数:1.6万 |
页数:117 |
图表数:104 |
中文电子版:7500元 |
中文纸版:3750元 |
中文(电子+纸)版:8000元 |
英文电子版:2100美元 |
英文纸版:2200美元 |
英文(电子+纸)版:2400美元 |
编号:ZYW131
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发布日期:2012-10 |
附件:下载 |
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2011-2012年全球及中国功率器件行业研究报告包括以下内容:1、功率器件简介 2、全球及中国功率器件市场 3、功率器件产业 4、IGBT、SiC与GaN市场与产业展望 5、18家功率器件厂家研究 功率器件包括功率IC、功率模块和功率分离元件(Power Discrete)。功率分离元件目前主要包括MOSFET、Diode、IGBT。功率器件领域最火热的话题莫过于SiC与GaN,它们吸引了大量的风险投资机构进入,这两项技术相对目前的硅半导体都具备非常明显的优势。 目前来看GaN的优势更明显。SiC比GaN最佳工作电压更高,最佳工作功率更高。SiC应用范围比较窄,局限在PFC(Power Factor Correction)、智能电网(Smart Grid)、轨道交通列车(Railcar)、海上风电(Offshore Wind Power)、PV和工业驱动领域。对于HEV、EV和PHEV市场,SiC相比GaN缺乏竞争力。HEV是目前市场主流,被丰田垄断,而丰田倾向于采用GaN而非SiC,当然在2015年之前IGBT还是主流。 轨道交通将是SiC市场增长的主要动力来源,日本三大SiC厂家三菱、东芝和日立都是全力以赴开发此市场,三菱动作最迅速。轨道交通市场最大市场在中国,中国投资高达2万亿投资轨道交通,仅2012年9月5日一天就批准了2476公里的轨道交通项目,目前有大约4300公里的轨道交通项目获批或在建,该领域SiC市场将被日本厂家主导。PV Inverter领域,目前PV产业陷入冰冻期,厂家对成本控制非常严厉,SiC成本太高,不可能进入此领域,目前还是IGBT为主流。 理论上GaN与SiC市场重合度很高,不过GaN应用范围很广,包括低于40V的消费类电子产品,这就意味着GaN有着很广阔的市场空间,而SiC最少也要600V以上。GaN目前的瓶颈就是耐压不高,不过这种状况正在改善。600V以上应用市场目前还需要技术突破,不过预计2013年可以突破。 GaN领域,风险投资火热,而SiC领域主要是日本厂家,甚少风险投资参与。在GaN市场上,Transphorm无疑是投资人的关注焦点,该公司从2009年开始,已陆续从Google创投(2000万美元)及索罗斯基金管理(Soros Fund Management)获得高达10400万美元的投资,最近的E轮投资达3500万美元,于2012年10月初完成。一向不投资外国企业的日本官方机构产业振兴机构INCJ(Innovation Network Corporation of Japan)也对Transphorm给予500万美元的投资。INCJ持股的Nihon Inter也将配合Transphorm开展量产计划。 三星、LG、英特尔、Infineon、NXP、STMicro等大厂都一致看好GaN,丰田旗下的Denso也是如此,纷纷投巨资进军GaN领域。新进的小厂家也不少,加拿大的GaN Systems、美国南卡罗莱纳州的Nitek,以及德国柏林的BeMiTec,日本Sanken也联合Panasonic及古河(Furukawa)计划在2013年量产GaN产品。
2011-2012年全球主要功率器件厂家收入排名(单位:百万美元)

Global and China Power Device Industry Report, 2011-2012underlines: 1. power device; 2. global and China power device market; 3. power device industry; 4. IGBT, SiC and GaN market and industry outlook; 5. 18 power device players; The power device is composed of power IC, power module, and power discrete. The power discrete mainly consists of MOSFET, Diode and IGBT. SiC and GaN, the spotlight in the power device industry, have attracted a great many of venture capital institutions to tap into the market. Compared to silicon semiconductor, the SiC and GaN technologies have more distinct competitive edges. Thus far, GaN has more distinctive advantages over SiC in terms of optimum operating voltage and optimum operating power. The application of SiC is limited in PFC (Power Factor Correction), smart grid, railcar, offshore wind power, PV and industrial driving field. While in HEV, EV and PHEV markets, SiC is less competitive than GaN. HEV is currently the mainstream in the market and is monopolized by Toyota, which tends to employ GaN instead of SiC. It is very sure that IGBT will remain to hold a dominant position before 2015. Rail transit is expected to be a big driver for SiC market growth. Leading Japanese SiC enterprises including Mitsubishi, Toshiba and Hitachi are all making desperate efforts to tap into the market and, in particular, Mitsubishi is the quickest to respond. China, as the main battlefield in the rail transit industry, lavished as high as RMB2 trillion investment in it. On September 5, 2012 alone, 2,476 km rail transit project was approved to build in China. Thus far, some 4,300 km rail transit project was approved or under construction. Japanese SiC enterprises will play a leading role in the industry. As for PV Inverter industry, it sank into freeze-up, resulting in producers’ rigid grip over cost. So it is unlikely for SiC to access the industry because of the overhigh cost. And IGBT is still the mainstream right now. In theory, the market concentration of GaN and SiC has significant overlap. However, GaN has wider application including in below 40V consumer electronics, indicating that GaN is expected to see huge potential in the market. But when it comes to SiC, the minimum voltage should exceed 600V when being applied in consumer electronics. The bottleneck of GaN is the low withstand voltage, which is improving gradually. In addition, it still needs to make technical breakthrough in above 600V application market, and which is expected to become a reality in 2013. The GaN field is witnessing a VC fever. But it is not such a case in SiC field which was dominated by Japanese enterprises. In the GaN market, Transphorm is undoubtedly in the spotlight of investors. Since 2009, Transphorm has obtained investment from Google Ventures (USD20 million) and Soros Fund Management as high as USD104 million. And the latest E round VC finished in early October 2012, valuing USD35 million. In particular, Innovation Network Corporation of Japan, a official entity which never showed interest in investing foreign enterprises, invested Transphorm as high as USD5 million. In addition, Nihon Inter with INCJ as one of shareholders, is set to offer support to Transphorm for the mass production. Magnates including Samsung, LG, Intel, Infineon, NXP and STMicro are all optimistic about the GaN market. And there is no exception for Denso affiliated to Toyota which invested heavily in GaN filed. In addition, emerging venders including Canada-based GaN Systems, America-based Nitek and Germany-based BeMiTec are tapping into the market. Moreover, Sanken is projected to team up with Panasonic and Furukawa to realize the mass production of GaN products in 2013.
Ranking of Global Leading Power Device Players by Revenue, 2011-2012 (USD mln)
第一章、功率器件市场 1.1、功率器件简介 1.2、功率器件市场 第二章、功率半导体市场与产业 2.1、IGBT简介 2.2、IGBT市场 2.2.1、风电市场 2.2.2、HEV、PHEV、EV市场 2.2.3、中国轨道交通市场 2.3、IGBT产业 2.4、SIC 2.4.1、SIC简介 2.4.2、SIC市场 2.4.3、SIC产业 2.5、GAN 2.5.1、GAN简介 2.5.2、GAN功率半导体市场 2.5.3、GAN领域内风险投资 2.6、功率器件产业 第三章、功率电子厂家研究 3.1、三肯电器 3.2、瑞萨 3.3、英飞凌 3.4、IR 3.5、ST 3.6、VISHAY 3.7、FAIRCHILD 3.8、TOSHIBA 3.9、MITSUBISHI ELECTRIC 3.10、FUJI ELECTRIC 3.11、ON-SEMI 3.12、NXP 3.13、ALPHA&OMEGA 3.14、SEMIKRON 3.15、NIHON INTER 3.16、TRANSPHORM 3.17、新电元 3.18、ROHM
1. Power Device Market 1.1. Overview 1.2. Market
2. Power Semiconductor Market and Industry 2.1.IGBT Brief 2.2.IGBT Market 2.2.1. Wind Power Market 2.2.2.HEV,PHEV and EV Markets 2.2.3、China Rail Transit Market 2.3.IGBT Industry 2.4.SiC 2.4.1.SiC Brief 2.4.2.SiC Market 2.4.3.SiC Industry 2.5.GaN 2.5.1.GaN Brief 2.5.2. GaN Power Semiconductor Market 2.5.3. VC in the GaN Field 2.6. Power Device Industry
3. Power Electronics Companies 3.1.Sanken 3.2.Renesas 3.3. Infineon 3.4.IR 3.5.ST 3.6.Vishay 3.7.Fairchild 3.8.Toshiba 3.9.Mitsubishi Electric 3.10.Fuji Electric 3.11.ON-SEMI 3.12.NXP 3.13.Alpha&Omega 3.14.SEMIKRON 3.15.Nihon Inter 3.16.Transphorm 3.17.Shindengen 3.18.ROHM
2007-2014年功率器件市场规模 2007-2014年分离型功率半导体市场规模 2009-2013年功率半导体市场产品分布 2009-2020年全球HEV、EV、PHEV销量 2009-2020年北美HEV、EV、PHEV销量 2009-2020年欧洲HEV、EV、PHEV销量 2009-2020年日本HEV、EV、PHEV销量 2009-2020年中国HEV、EV、PHEV销量 2005-2012年中国铁路建设投资额 2010-2015年中国地铁建设投资额 2010-2015年中国地铁列车出货量 2012年全球主要IGBT厂家市场占有率 IGBT产业链 IGBT厂家全球分布 SiC Wafer制造流程 SiC性能对比Si 2009-2015年SiC与GaN 功率半导体市场规模 SiC与GaN功率半导体应用分布 2003-2012年SiC产业领域收购项目 全球SiC Substrate厂家List 600V GaN HEMT vs SJ MOSFETs IGBT 2011-2012年全球主要功率器件厂家收入排名 分离型标准MOSFET厂家排名 FY2007-2013 年三肯电器销售额与运营利润率 FY2009-2013年三肯电器收入业务分布 FY2009-2013年三肯电器收入地域分布 FY2008-FY2012 三肯电器半导体器件事业部销售额与运营利润 FY2012年三肯电器半导体器件事业部收入应用分布 FY2008-FY2012三肯电器半导体器件事业部收入应用分布 FY2008-FY2012三肯电器 Power Module事业部销售额与运营利润 FY2008-FY2012三肯电器 Power Module事业部收入应用分布 FY2008-FY2012 三肯电器Power System事业部销售额与运营利润 FY2008-FY2012三肯电器 Power System事业部收入应用分布 三肯电器日本本土工厂分布 三肯电器日本以外工厂分布 瑞萨组织结构 2011-2012财年瑞萨收入部门分布 2012财年Renesas Analog and power devices事业部收入业务分布 Renesas前段(Front-end)生产基地 Renesas后段(Back-end)生产基地 FY2011年1季度-FY2012年3季度英飞凌季度收入与运营利润 FY2011年1季度-FY2012年3季度英飞凌季度收入业务分布 FY2011年1季度-FY2012年3季度英飞凌IPC事业部季度收入与运营利润率 FY2011年1季度-FY2012年3季度英飞凌PMM事业部季度收入与运营利润率 FY2011 英飞凌ATV事业部收入产品分布 FY2011 英飞凌ATV事业部收入产品下游应用分布 FY2011 英飞凌IMM事业部收入产品下游应用分布 英飞凌PMM事业部FY2012 H1收入地域分布 英飞凌PMM事业部主要顾客 英飞凌PMM事业部FY2012 H1收入下游应用分布 2012年RF POWER AMPLIFIER FOR CELLUAR INFRASTRUCTURE主要厂家市场占有率 FY2008-212年IR收入与运营利润率 2011年1季度-2012年2季度IR季度收入与运营利润率 FY2009-2012年IR收入业务分布 FY2009-2012年IR运营利润分布 FY2012年IR收入下游应用分布 FY2012年IR收入渠道分布 2010年4季度-2012年2季度IR汽车事业部季度收入 2010年4季度-2012年2季度IR Enterprise Power事业部季度收入 2007-2012年ST收入与运营利润 ST组织结构 2011年ST收入业务分布 2011年ST收入下游应用分布 2011年ST收入地域分布 2012年H1 ST IPD收入下游应用分布 ST全球生产基地分布 2007-2012年Vishay收入与运营利润率 2011年Vishay收入下游应用分布 2010年4季度-2012年2季度Vishay收入产品分布 2010年4季度-2012年2季度Vishay MOSFET事业部收入与毛利率 2007-2012年Fairchild收入、运营利润率和毛利率 2008-2011年Fairchild收入国别分布 2008-2011年Fairchild收入业务分布 东芝半导体组织结构 FY2008-FY2013年东芝分离器件事业收入 FY2003-FY2012年Mitsubishi Electric收入业务分布 FY2008-FY2015年Mitsubishi Electric Power Devices收入 FY2008-2013年富士电机收入与运营利润率 FY2010-2012年富士电机收入业务分布 FY2010-2012年富士电机运营利润分布 FY2011-2012年富士电机收入地域分布 FY2011-FY2014富士电机Electronics Devices事业部收入业务分布 FY2011-FY2014富士电机Electronics Devices事业部收入产品分布 FY2011-FY2014富士电机Power Electronics事业部收入业务分布 2007-2012年ON-SEMI收入与EBITDA 2011年ON-SEMI收入地域分布、终端(End Market)分布、渠道分布 2007-2012H1 ON-SEMI收入部门分布 2007-2012H1 ON-SEMI运营利润部门分布 2009年ON-SEMI Standard Products事业部收入产品分布 2009-2012H1 NXP收入业务分布 2010年1季度-2012年2季度NXP Standard Products事业部季度收入与毛利率 2010年1季度-2012年2季度NXP Standard Products事业部季度运营利润率 FY2006-FY2012 Alpha&Omega收入与运营利润率 FY2008-FY2012 Alpha&Omega收入业务分布 FY2010-FY2012 Alpha&Omega收入地域分布 FY2008-FY2013年Nihon Inter收入与运营利润率 FY2009-FY2012年Nihon Inter收入业务分布 FY2008-FY2013年新电元收入与运营利润率 FY2012年新电元收入地域分布 FY2012年新电元收入下游应用分布 FY2011-FY2012年新电元收入业务分布 FY2005-FY2012年ROHM收入与运营利润 FY2003-2012年Rohm收入产品分布 FY2003-2012年Rohm收入地域分布
Power Device Market Size, 2007-2014 Discrete Power Semiconductor Market Scale, 2007-2014 Product Distribution in Power Semiconductor Market, 2009-2013 Sales of HEV, EV and PHEV Worldwide, 2009-2020 Sales of HEV, EV and PHEV in North America, 2009-2020 Sales of HEV, EV and PHEV in Europe, 2009-2020 Sales of HEV, EV and PHEV in Japan, 2009-2020 Sales of HEV, EV and PHEV in China, 2009-2020 Investment in Railway Construction in China, 2005-2012 Investment in Subway Construction in China, 2010-2015 Metro Train Shipment in China, 2010-2015 Market Occupancy of Leading IGBT Players Worldwide, 2012 IGBT Industrial Chain Global Distribution of IGBT Manufacturers SiC Wafer Manufacturing Flow SiC/Si Performance SiC/GaN Power Semiconductor Market Scale, 2009-2015 Application Distribution of SiC/GaN Power Semiconductor Acquisition Cases in SiC Industry, 2003-2012 SiC Substrate Manufacturers Worldwide 600V GaN HEMT vs SJ MOSFETs IGBT Ranking of Global Leading Power Device Players by Revenue, 2011-2012 Ranking of Discrete MOSFET Companies Sales and Operating Margin of Sanken, FY2007-FY2013 Revenue of Sanken by Business, FY2009-FY2013 Revenue of Sanken by Region, FY2009-FY2013 Sales and Operating Margin of Sanken from Semiconductor Device Business Division, FY2008-FY2012 Revenue of Sanken from Semiconductor Device Business Division by Application, FY2012 Revenue of Sanken from Semiconductor Device Business Division by Application, FY2008-FY2012 Sales and Operating Profit of Sanken from Power Module Business Division, FY2008-FY2012 Revenue of Sanken from Power Module Business Division by Application, FY2008-FY2012 Sales and Operating Margin of Sanken from Power Module Business Division, FY2008-FY2012 Revenue of Sanken from Power Module Business Division by Application, FY2008-FY2012 Japan-Based Plants under Sanken Plants under Sanken beyond Japan Organization of Renesas Revenue of Renesas by Business Division, FY2011-FY2012 Revenue of Renesas from Analog and Power Devices Business Division, FY2012 Front-End Production Base of Renesas Back-End Production Base of Renesas Quarterly Revenue and Operating Profit of Infineon, FY2011Q1-FY2012Q3 Quarterly Revenue of Infineon by Business, FY2011Q1-FY2012Q3 Quarterly Revenue and Operating Margin of Infineon from IPC Business Division, FY2011Q1-FY2012Q3 Quarterly Revenue and Operating Margin of Infineon from PMM Business Division, FY2011Q1-FY2012Q3 Revenue of Infineon from ATV Business Division by Product, FY2011 Revenue of Infineon from ATV Business Division by Downstream Application, FY2011 Revenue of Infineon from IMM Business Division by Downstream Application, FY2011 Revenue of Infineon from PMM Business Division by Region Major Customers of Infineon from PMM Business Division Revenue of Infineon from PMM Business Division by Downstream Application, FY2012H1 Market Occupancy of Major Companies of RF Power Amplifier for Celluar Infrastructure, 2012 Revenue and Operating Margin of IR, FY2008-FY2012 Quarterly Revenue and Operating Margin of IR, FY2011Q1-FY2012Q2 Revenue of IR by Business, FY2009-FY2012 Operating Profit of IR, FY2009-FY2012 Revenue of IR by Downstream Application, FY2012 Revenue of IR by Channel, FY2012 Quarterly Revenue of IR from Auto Business Division, 2010Q4-2012Q2 Quarterly Revenue of IR from Enterprise Power Business Division, 2010Q4-2012Q2 Revenue and Operating Profit of ST, 2007-2012 ST Organization Revenue of ST by Business, 2011 Revenue of ST by Downstream Application, 2011 Revenue of ST by Region, 2011 Revenue from IPD Business Division of ST, 2012H1 Global Production Bases of ST Revenue and Operating Margin of Vishay, 2007-2012 Revenue of Vishay by Downstream Application, 2011 Revenue of Vishay by Product, 2010Q4-2012Q2 Revenue and Gross Margin of Vishay MOSFET Business Division, 2010Q4-2012Q2 Revenue, Operating Margin and Gross Margin of Fairchild, 2007-2012 Revenue of Fairchild by Country, 2008-2011 Revenue of Fairchild by Business, 2008-2011 Organization of Toshiba Semiconductor Revenue of Toshiba from Discrete Device Business Division, FY2008-FY2013 Revenue of Mitsubishi Electric by Business, FY2003-FY2012 Revenue of Mitsubishi Electric Power Devices, FY2008-FY2015 Revenue and Operating Margin of Fuji Electric, FY2008-FY2013 Revenue of Fuji Electric by Business, FY2010-FY2012 Operating Profit of Fuji Electric, FY2010-FY2012 Revenue of Fuji Electric by Region, FY2011-FY2012 Revenue of Fuji Electric from Electronics Devices Business Division by Business, FY2011-FY2014 Revenue of Fuji Electric from Electronics Devices Business Division by Product, FY2011-FY2014 Revenue of Fuji Electric from Power Electronics Business Division by Business, FY2011-FY2014 Revenue and EBITDA of ON-SEMI, 2007-2012 Revenue of ON-SEMI by Region, End Market and Channel, 2011 Revenue of ON-SEMI by Business Division, 2007-2012H1 Operating Profit of ON-SEMI by Business Division, 2007-2012H1 Revenue of ON-SEMI Standard Products Business Division by Product, 2009 Revenue of NXP by Business, 2009-2012H1 Quarterly Revenue and Gross Margin of NXP Standard Products Business Division, 2010Q1-2012Q2 Quarterly Operating Margin of NXP Standard Products Business Division, 2010Q1-2012Q2 Revenue and Operating Margin of Alpha&Omega, FY2006-FY2012 Revenue of Alpha&Omega by Business, FY2008-FY2012 Revenue of Alpha&Omega by Region, FY2010-FY2012 Revenue and Operating Margin of Nihon Inter, FY2008-FY2013 Revenue of Nihon Inter by Business, FY2009-FY2012 Revenue and Operating Margin of Shindengen, FY2008-FY2013 Revenue of Shindengen by Region, FY2012 Revenue of Shindengen by Downstream Application, FY2012 Revenue of Shindengen by Business, FY2011-FY2012 Revenue and Operating Profit of Rohm, FY2005-FY2012 Revenue of Rohm by Product, FY2003-FY2012 Revenue of Rohm by Region, FY2003-FY2012
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